Impact of ion energy on single-event upset

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August undefined, 2024

Witryna1 maj 2024 · Traditionally, the linear energy transfer (LET) is considered as the only important factor influencing the sensitivity of the single-event effect (SEE) in semiconductor devices [1]. However, studies in recent years indicated that except for LET, the incident heavy ions energy and species will also impact SEE's measured … Witryna21 lip 2024 · The particles with high linear energy transfer (LET) of 57.9 MeV cm 2 / mg is used to measure the single event latch-up (SEL) tolerance, which results in a sufficiently low cross-section of σ SEL < 4.2 × 10 − 11 cm 2 /(Ion×ASIC). The single event upset (SEU) tolerance is estimated with various kinds of species with wide …

The Impacts of Heavy-Ion Energy on Single Event Upsets

WitrynaSingle Event Effects (SEEs) are caused by a single, energetic particle, and can take on many forms. ... spacecraft designers have to be concerned with two main causes of Single Event Effects (SEEs): cosmic rays and high energy protons. For cosmic rays, SEEs are typically caused by its heavy ion component. These heavy ions cause a … Witryna19 mar 2024 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ... incompatibility\u0027s iw

Impact of Heavy Ion Energy and Nuclear Interactions on Single …

Witryna12 gru 2007 · Abstract: The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and … WitrynaSingle Event Effects (SEEs) are caused by a single, energetic particle, and can take on many forms. ... spacecraft designers have to be concerned with two main causes of Single Event Effects (SEEs): cosmic rays and high energy protons. For cosmic rays, … incompatibility\u0027s jt

Single event upset mechanisms for low energy deposition events …

Impact of heavy ion energy and species on single-event upset in ...

Witryna1 maj 2024 · Impact of ion energy on single-event upset. ... The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM. IEEE Trans. Nucl. Sci., 52 (2005), pp. 2125-2131, 10.1109/TNS.2005.860677. View Record in Scopus Google Scholar Witryna1 kwi 2007 · A new form of microscopy has been developed which produces micron- resolution maps of where single event upsets occur during ion irradiation of integrated circuits. utilizing a nuclear microprobe, this imaging technique can irradiate, in isolation, the lowest functional units of an integrated circuit (e.g. transistor drains, gates, … incompatibility\u0027s ivWitrynaAbstract: The dependence of single event upset (SEU) on heavy ion energy was investigated for partially depleted silicon-on-insulator static random access memories. An unexpected phenomenon has been shown that the SEU cross sections decrease 70% with the increase of 12 C ion linear energy transfer (LET) from 1.7 to 3.0 … incompatibility\u0027s jf

"Witryna1 gru 1998 · The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 {micro}m and integration densities from 16 Kbit to 1 Mbit. " - Impact of ion energy on single-event upset

Impact of ion energy on single-event upset

Witryna1 cze 2013 · The influence of the metric of linear energy transfer (LET) on single event upset (SEU), particularly multiple bit upset (MBU) in a hypothetical 90-nm static random access memory (SRAM) is explored. Witryna1 maj 2024 · The single event upset effect refers to the effect th at high-energy particles impact the storage circuit . ... When the heavy ion upset threshold is reached, the n0 node will upset from "1" to "0

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WitrynaImpact ionization is an efficient method to generate electron–hole pairs [1,3]. In N-channel MOSFET, the electrons are collected at the drain and the holes are retained in the body by a negative back-gate voltage. Writing “1” is fast but requires a high drain voltage () and consumes power. The parasitic bipolar transistor (PBT) is ... Witryna27 wrz 2024 · Single-event effects (SEEs) have been the primary concern in study of radiation effects since late 1970s with the discovery of soft errors in terrestrial and space environments. The interaction of a single ionized particle with electronic devices leads to SEEs. In this paper, single-event upset (SEU) on CMOS devices in designing of a …

Witryna22 cze 2024 · Power up the AD9246S. Select the desired ion and desired angle of incidence. Turn on the ion beam while observing, monitoring, and logging the power supply currents and recording any upset events. Turn off the beam when either the specified number of upsets is recorded or the fluence reaches 10 6 ions/cm 2 . Witrynaprovide a variety of ions over arange of energies for testing. Each device under test (DUT) was irradiated with heavy ions having linear energy transfer (LET) ranging from 0.07 to 80 MeV•cm 2 /mg. Fluxes ranged from 1x10 2 to 1x10 5 particles/cm 2 /s, depending on device sensitivity. Representative ions used are listed in Tables I, II …

Witryna1 lip 2006 · Single event upset mechanisms for low energy deposition events in silicon germanium HBTs.. United States: N. p., 2006. ... Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits. Conference Dodd, Paul; Schwank, James; ... Witryna20 mar 2024 · Abstract: The dependence of single event upset (SEU) on heavy ion energy was investigated for partially depleted silicon-on-insulator static random access memories. An unexpected phenomenon has been shown that the SEU cross sections decrease 70% with the increase of 12 C ion linear energy transfer (LET) from 1.7 to …

WitrynaThe two channels can be seamlessly interleaved for conversion rates up to 3.2 GSPS. The device was put through heavy ion testing and was monitored for Single Event Latch-up, Single Event Functional Interrupt and Single Event Upset (SEU). Testing was done at two different ion energies and the impact of ion energy on SEU response is …

Witryna5 lip 2024 · Abstract: The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- $\mu \text{m}$ double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a … incompatibility\u0027s jcWitrynaEstimating the rate of SEU events requires the following information: 1. The critical charge: how much charge must be injected into a node to trigger regenerative action. 2. The device geometry: the area of the sensitive node and the available path length for an ionizing particle to deposit its energy. 3. incompatibility\u0027s jdWitryna15 sie 2000 · The Single Event Upset (SEU) characteristics of a CMOS SRAM cell irradiated under conditions that simulate the total-dose degradation anticipated in space applications are experimentally and theoretically investigated. ... and immediately measures the effect of a high-energy ion strike on circuit performance. Information … incompatibility\u0027s jhWitrynaSingle Event Effect (SEE)- any measurable effect to a circuit due to an ion strike. This includes (but is not limited to) SEUs, SHEs, SELs, SEBs, SEGRs, and Single Event Dielectric Rupture (SEDR). Single Event Upset (SEU) - a change of state or transient induced by an energetic particle such as a cosmic ray or proton in a device. incompatibility\u0027s jiWitrynafacilities are suitable for providing a variety of ions over a range of energies for testing. The devices under test (DUTs) were irradiated with heavy ions having linear energy transfers (LETs) ranging from 0.59 to 120 MeV•cm 2 /mg. Fluxes ranged from 1x10 2 to 1x10 7 particles/cm 2 /s, depending on device sensitivity. incompatibility\u0027s j4WitrynaThe impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and high-energy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 /spl mu/m and integration densities from 16 Kbit to 1 Mbit. No significant differences were observed between the low and … incompatibility\u0027s jgWitryna1 lut 2011 · The Effect of Neutron Energy on Single Event Upsets and Multiple Bit Upsets.. United States: N. p., 2011. ... Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits. ... Single event upset mechanisms for low energy deposition events in silicon germanium HBTs. … incompatibility\u0027s jp